Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum

Ying Dai; Shanyu Quan

doi:doi:10.11648/j.ijepe.20150406.14

| Peer-Reviewed

Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum

Ying Dai, Shanyu Quan

Published in International Journal of Energy and Power Engineering (Volume 4, Issue 6)

Received: 11 December 2015 Published: 11 December 2015

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wave functions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.

Published in	International Journal of Energy and Power Engineering (Volume 4, Issue 6)
DOI	10.11648/j.ijepe.20150406.14
Page(s)	353-357
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Near-Ultraviolet LEDs, Efficiency Droop, Auger Recombination

References

[1]	M. Koike, N. Shibata, H. Kato, and Y. Takahashi, Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications (J) IEEE J. Sel. Topics Quantum Electron., 2002, vol. 8, pp. 271–277.
[2]	C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, C. H. Kuo, and Y. C. Lin, Nitride-based cascade near white light-emitting diodes (J) IEEE Photonics Technol. Lett., 2002, vol. 14, pp. 908–910.
[3]	A. B. Sebitosi and P. Pillay, New Technologies for Rural Lighting in Developing Countries: White LEDs (J) IEEE Trans. Energy Convers., 2007, vol. 22, pp. 674–679.
[4]	M. H. Crawford, LEDs for solid-state lighting: performance challenges and recent advances (J) IEEE J. Sel. Top. Quantum Electron., 2009, vol. 15, pp. 1028–1040.
[5]	E. F. Schubert and J. K. Kim, Solid-state light sources getting smart (J) Science, 2005, vol. 308, pp. 1274–1278
[6]	M. R. Krame, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L.Zhou, G. Harbers, and M. G. Craford, Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (J) J. Disp. Technol., 2007, vol. 3, pp. 160–175.
[7]	J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo,Y.-K. Kuo, and S.-C. Wang, Auger recombination in InGaN measured by photoluminescence (J) Appl. Phys.B-Lasers Opt., 2010, vol. 98, pp. 779−789.
[8]	H. Zhao, G. Liu, R. A. Arif, and N. Tansu, Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes (J) Solid-State Electron., 2010, vol. 54, pp. 1119−1124.
[9]	J.-I. Shim, D.-P. Han, H. Kim, D.-S. Shin, G.-B. Lin, D. S. Meyaard, Q. Shan, J. Cho, E. F. Schubert, H. Shim, and C. Sone, Efficiency droop in AlGaInP and GaInN light-emitting diodes (J) Appl. Phys. Lett.,2012, vol. 100, pp. 111106-1–111106-4,
[10]	K. S. Kim, J. H. Kim, Y. M. Park, S. J. Jung, Y. J. Park, and S. N. Cho, Investigation of dominant effect on efficiency droop in In GaN light emitting device (J) Appl. Phys. Lett., 2010, vol. 97, pp.031113-1–031113-3
[11]	D. S. Meyaard, Q. Shan, J. Cho, E. F. Schubert, S.-H. Han, M.-H. Kim, C. Sone, S. J. Oh, and J. K. Kim, Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities （J）Appl. Phys. Lett., 2012，vol. 100, pp. 081106-1–081106-3.
[12]	D. S. Meyaard, G.-B. Lin, M. Ma, J. Cho, E. F. Schubert, S.-H. Han, M.-H.Kim, H. Shim, and Y. S. Kim, Appl. Phys. Lett. 103, 201112 (2013).
[13]	M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Origin of efficiency droop in GaN-based light-emitting diodes (J) 2007, Appl. Phys. Lett. 91, 183507-183510.
[14]	M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop (J) Appl. Phys. Lett. ,2008, Vol 93, 041102-041106.
[15]	G.-S. Huang, H.-C. Kuo, M.-H. Lo, T.-C. Lu, J.-Y. Tsai, and S.-C. Wang, Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers (J) J. Cryst. Growth , 2007, Vol 305, 55-58.
[16]	I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys (J) J. Appl.Phys. , 2001, Vol 89, 5815-5819.
[17]	J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, Temperature dependence of the fundamental band gap of InN (J) J. Appl. Phys., 2004, Vol 94, 4457-4461.
[18]	N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Temperature and compositional dependence of the energy band gap of AlGaN alloys (J) Appl. Phys. Lett. , 2005, Vol 87, 242104-242108.
[19]	J. Piprek and S. Nakamura, Physics of high-power InGaN/GaN lasers (J) IEE Proc.-Optoelectron. 2002, Vol 149, 145-149
[20]	J. Piprek, Nitride Semicon New Technologies for Rural Lighting in Developing Countries: White LEDs Devices – Principles and Simulation (Wiley-VCH Verlag, Weinheim, 2007), p. 24-28.
[21]	V. Fiorentini, F. Bernardini, and O. Ambacher, Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructure (J) Appl. Phys. Lett., 2002, vol. 80, pp. 1204−1206.

Cite This Article

Plain Text BibTeX RIS

APA Style

Ying Dai, Shanyu Quan. (2015). Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum. International Journal of Energy and Power Engineering, 4(6), 353-357. https://doi.org/10.11648/j.ijepe.20150406.14

Copy | Download

ACS Style

Ying Dai; Shanyu Quan. Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum. Int. J. Energy Power Eng. 2015, 4(6), 353-357. doi: 10.11648/j.ijepe.20150406.14

Copy | Download

AMA Style

Ying Dai, Shanyu Quan. Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum. Int J Energy Power Eng. 2015;4(6):353-357. doi: 10.11648/j.ijepe.20150406.14

Copy | Download

@article{10.11648/j.ijepe.20150406.14,
  author = {Ying Dai and Shanyu Quan},
  title = {Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum},
  journal = {International Journal of Energy and Power Engineering},
  volume = {4},
  number = {6},
  pages = {353-357},
  doi = {10.11648/j.ijepe.20150406.14},
  url = {https://doi.org/10.11648/j.ijepe.20150406.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijepe.20150406.14},
  abstract = {Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wave functions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum
AU  - Ying Dai
AU  - Shanyu Quan
Y1  - 2015/12/11
PY  - 2015
N1  - https://doi.org/10.11648/j.ijepe.20150406.14
DO  - 10.11648/j.ijepe.20150406.14
T2  - International Journal of Energy and Power Engineering
JF  - International Journal of Energy and Power Engineering
JO  - International Journal of Energy and Power Engineering
SP  - 353
EP  - 357
PB  - Science Publishing Group
SN  - 2326-960X
UR  - https://doi.org/10.11648/j.ijepe.20150406.14
AB  - Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wave functions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.
VL  - 4
IS  - 6
ER  -

Copy | Download

Author Information

Ying Dai

School of Science, Shenyang University of Technology, Shenyang, China
Shanyu Quan

School of Science, Shenyang University of Technology, Shenyang, China

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Ying Dai, Shanyu Quan. (2015). Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum. International Journal of Energy and Power Engineering, 4(6), 353-357. https://doi.org/10.11648/j.ijepe.20150406.14

Copy | Download

ACS Style

Ying Dai; Shanyu Quan. Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum. Int. J. Energy Power Eng. 2015, 4(6), 353-357. doi: 10.11648/j.ijepe.20150406.14

Copy | Download

AMA Style

Ying Dai, Shanyu Quan. Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum. Int J Energy Power Eng. 2015;4(6):353-357. doi: 10.11648/j.ijepe.20150406.14

Copy | Download

@article{10.11648/j.ijepe.20150406.14,
  author = {Ying Dai and Shanyu Quan},
  title = {Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum},
  journal = {International Journal of Energy and Power Engineering},
  volume = {4},
  number = {6},
  pages = {353-357},
  doi = {10.11648/j.ijepe.20150406.14},
  url = {https://doi.org/10.11648/j.ijepe.20150406.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijepe.20150406.14},
  abstract = {Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wave functions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum
AU  - Ying Dai
AU  - Shanyu Quan
Y1  - 2015/12/11
PY  - 2015
N1  - https://doi.org/10.11648/j.ijepe.20150406.14
DO  - 10.11648/j.ijepe.20150406.14
T2  - International Journal of Energy and Power Engineering
JF  - International Journal of Energy and Power Engineering
JO  - International Journal of Energy and Power Engineering
SP  - 353
EP  - 357
PB  - Science Publishing Group
SN  - 2326-960X
UR  - https://doi.org/10.11648/j.ijepe.20150406.14
AB  - Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wave functions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.
VL  - 4
IS  - 6
ER  -

Copy | Download