This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.
| Published in | American Journal of Nano Research and Applications (Volume 6, Issue 2) |
| DOI | 10.11648/j.nano.20180602.11 |
| Page(s) | 34-53 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2018. Published by Science Publishing Group |
GaN, ZnO, Nanostructured, Hybrid, Light Emitting Diodes, Nanowires, Multiple Quantum Wells (MQW), UV
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APA Style
Ahmed Mohammed Nahhas. (2018). Review of GaN/ZnO Hybrid Structures Based Materials and Devices. American Journal of Nano Research and Applications, 6(2), 34-53. https://doi.org/10.11648/j.nano.20180602.11
ACS Style
Ahmed Mohammed Nahhas. Review of GaN/ZnO Hybrid Structures Based Materials and Devices. Am. J. Nano Res. Appl. 2018, 6(2), 34-53. doi: 10.11648/j.nano.20180602.11
AMA Style
Ahmed Mohammed Nahhas. Review of GaN/ZnO Hybrid Structures Based Materials and Devices. Am J Nano Res Appl. 2018;6(2):34-53. doi: 10.11648/j.nano.20180602.11
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Download@article{10.11648/j.nano.20180602.11,
author = {Ahmed Mohammed Nahhas},
title = {Review of GaN/ZnO Hybrid Structures Based Materials and Devices},
journal = {American Journal of Nano Research and Applications},
volume = {6},
number = {2},
pages = {34-53},
doi = {10.11648/j.nano.20180602.11},
url = {https://doi.org/10.11648/j.nano.20180602.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20180602.11},
abstract = {This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.},
year = {2018}
}
TY - JOUR T1 - Review of GaN/ZnO Hybrid Structures Based Materials and Devices AU - Ahmed Mohammed Nahhas Y1 - 2018/06/15 PY - 2018 N1 - https://doi.org/10.11648/j.nano.20180602.11 DO - 10.11648/j.nano.20180602.11 T2 - American Journal of Nano Research and Applications JF - American Journal of Nano Research and Applications JO - American Journal of Nano Research and Applications SP - 34 EP - 53 PB - Science Publishing Group SN - 2575-3738 UR - https://doi.org/10.11648/j.nano.20180602.11 AB - This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed. VL - 6 IS - 2 ER -
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