Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application

Sheikh Rashel Al Ahmed; Abu Bakar Md. Ismail

doi:doi:10.11648/j.nano.20140201.12

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Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application

Sheikh Rashel Al Ahmed, Abu Bakar Md. Ismail

Published in American Journal of Nanoscience and Nanotechnology (Volume 2, Issue 1)

Received: 5 January 2014 Published: 20 February 2014

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Abstract

Silicon nanocrystals (Si-NCs) embedded in a Lanthanum Fluoride (LaF3) insulating layer were fabricated as a charge trapping layer by a simple Chemical Bath Deposition (CBD) technique. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. The charge storage behavior of Si-NCs embedded in the LaF3 layer have been investigated in metal-insulator-semiconductor (MIS) structures by electrical characterization, where various interface traps and defects were introduced by thermal annealing treatment. The flat-band voltage shift of capacitance-voltage (C–V) and conductance-voltage (G–V) curves of Si: NC-MIS devices were found to exhibit charge trapping. The current-voltage (I–V) measurement also demonstrate that traps have strong influence on the charge storage behavior, in which the traps and defects at the internal/surface of silicon nanocrystals and the interface states at the LaF3 /Si substrate play different roles, respectively. The flat-band voltage (VFB) shift was about 700 mV, which is agreed well enough to capture charge inside the nanoparticle for nonvolatile memory (NVM) device applications. Thickness-dependent flat-band voltage (VFB) shifts in the MIS structure which can be used as a low-voltage nonvolatile memory.

Published in	American Journal of Nanoscience and Nanotechnology (Volume 2, Issue 1)
DOI	10.11648/j.nano.20140201.12
Page(s)	8-12
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Si Nanocrystal, MIS Devices, Nonvolatile Memory

References

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APA Style

Sheikh Rashel Al Ahmed, Abu Bakar Md. Ismail. (2014). Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application. American Journal of Nano Research and Applications, 2(1), 8-12. https://doi.org/10.11648/j.nano.20140201.12

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ACS Style

Sheikh Rashel Al Ahmed; Abu Bakar Md. Ismail. Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application. Am. J. Nano Res. Appl. 2014, 2(1), 8-12. doi: 10.11648/j.nano.20140201.12

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AMA Style

Sheikh Rashel Al Ahmed, Abu Bakar Md. Ismail. Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application. Am J Nano Res Appl. 2014;2(1):8-12. doi: 10.11648/j.nano.20140201.12

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@article{10.11648/j.nano.20140201.12,
  author = {Sheikh Rashel Al Ahmed and Abu Bakar Md. Ismail},
  title = {Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application},
  journal = {American Journal of Nano Research and Applications},
  volume = {2},
  number = {1},
  pages = {8-12},
  doi = {10.11648/j.nano.20140201.12},
  url = {https://doi.org/10.11648/j.nano.20140201.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20140201.12},
  abstract = {Silicon nanocrystals (Si-NCs) embedded in a Lanthanum Fluoride (LaF3) insulating layer were fabricated as a charge trapping layer by a simple Chemical Bath Deposition (CBD) technique. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. The charge storage behavior of Si-NCs embedded in the LaF3 layer have been investigated in metal-insulator-semiconductor (MIS) structures by electrical characterization, where various interface traps and defects were introduced by thermal annealing treatment. The flat-band voltage shift of capacitance-voltage (C–V) and conductance-voltage (G–V) curves of Si: NC-MIS devices were found to exhibit charge trapping. The current-voltage (I–V) measurement also demonstrate that traps have strong influence on the charge storage behavior, in which the traps and defects at the internal/surface of silicon nanocrystals and the interface states at the LaF3 /Si substrate play different roles, respectively. The flat-band voltage (VFB) shift was about 700 mV, which is agreed well enough to capture charge inside the nanoparticle for nonvolatile memory (NVM) device applications. Thickness-dependent flat-band voltage (VFB) shifts in the MIS structure which can be used as a low-voltage nonvolatile memory.},
 year = {2014}
}

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TY  - JOUR
T1  - Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application
AU  - Sheikh Rashel Al Ahmed
AU  - Abu Bakar Md. Ismail
Y1  - 2014/02/20
PY  - 2014
N1  - https://doi.org/10.11648/j.nano.20140201.12
DO  - 10.11648/j.nano.20140201.12
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 8
EP  - 12
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20140201.12
AB  - Silicon nanocrystals (Si-NCs) embedded in a Lanthanum Fluoride (LaF3) insulating layer were fabricated as a charge trapping layer by a simple Chemical Bath Deposition (CBD) technique. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. The charge storage behavior of Si-NCs embedded in the LaF3 layer have been investigated in metal-insulator-semiconductor (MIS) structures by electrical characterization, where various interface traps and defects were introduced by thermal annealing treatment. The flat-band voltage shift of capacitance-voltage (C–V) and conductance-voltage (G–V) curves of Si: NC-MIS devices were found to exhibit charge trapping. The current-voltage (I–V) measurement also demonstrate that traps have strong influence on the charge storage behavior, in which the traps and defects at the internal/surface of silicon nanocrystals and the interface states at the LaF3 /Si substrate play different roles, respectively. The flat-band voltage (VFB) shift was about 700 mV, which is agreed well enough to capture charge inside the nanoparticle for nonvolatile memory (NVM) device applications. Thickness-dependent flat-band voltage (VFB) shifts in the MIS structure which can be used as a low-voltage nonvolatile memory.
VL  - 2
IS  - 1
ER  -

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Author Information

Sheikh Rashel Al Ahmed

Department of Electronic and Telecommunication Engineering, Pabna University of Science and Technology, Pabna 6600, Bangladesh
Abu Bakar Md. Ismail

Department of Applied Physics and Electronic Engineering, Rajshahi University, Rajshahi 6202, Bangladesh

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APA Style

Sheikh Rashel Al Ahmed, Abu Bakar Md. Ismail. (2014). Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application. American Journal of Nano Research and Applications, 2(1), 8-12. https://doi.org/10.11648/j.nano.20140201.12

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ACS Style

Sheikh Rashel Al Ahmed; Abu Bakar Md. Ismail. Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application. Am. J. Nano Res. Appl. 2014, 2(1), 8-12. doi: 10.11648/j.nano.20140201.12

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AMA Style

Sheikh Rashel Al Ahmed, Abu Bakar Md. Ismail. Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application. Am J Nano Res Appl. 2014;2(1):8-12. doi: 10.11648/j.nano.20140201.12

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@article{10.11648/j.nano.20140201.12,
  author = {Sheikh Rashel Al Ahmed and Abu Bakar Md. Ismail},
  title = {Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application},
  journal = {American Journal of Nano Research and Applications},
  volume = {2},
  number = {1},
  pages = {8-12},
  doi = {10.11648/j.nano.20140201.12},
  url = {https://doi.org/10.11648/j.nano.20140201.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20140201.12},
  abstract = {Silicon nanocrystals (Si-NCs) embedded in a Lanthanum Fluoride (LaF3) insulating layer were fabricated as a charge trapping layer by a simple Chemical Bath Deposition (CBD) technique. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. The charge storage behavior of Si-NCs embedded in the LaF3 layer have been investigated in metal-insulator-semiconductor (MIS) structures by electrical characterization, where various interface traps and defects were introduced by thermal annealing treatment. The flat-band voltage shift of capacitance-voltage (C–V) and conductance-voltage (G–V) curves of Si: NC-MIS devices were found to exhibit charge trapping. The current-voltage (I–V) measurement also demonstrate that traps have strong influence on the charge storage behavior, in which the traps and defects at the internal/surface of silicon nanocrystals and the interface states at the LaF3 /Si substrate play different roles, respectively. The flat-band voltage (VFB) shift was about 700 mV, which is agreed well enough to capture charge inside the nanoparticle for nonvolatile memory (NVM) device applications. Thickness-dependent flat-band voltage (VFB) shifts in the MIS structure which can be used as a low-voltage nonvolatile memory.},
 year = {2014}
}

Copy | Download

TY  - JOUR
T1  - Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application
AU  - Sheikh Rashel Al Ahmed
AU  - Abu Bakar Md. Ismail
Y1  - 2014/02/20
PY  - 2014
N1  - https://doi.org/10.11648/j.nano.20140201.12
DO  - 10.11648/j.nano.20140201.12
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 8
EP  - 12
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20140201.12
AB  - Silicon nanocrystals (Si-NCs) embedded in a Lanthanum Fluoride (LaF3) insulating layer were fabricated as a charge trapping layer by a simple Chemical Bath Deposition (CBD) technique. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. The charge storage behavior of Si-NCs embedded in the LaF3 layer have been investigated in metal-insulator-semiconductor (MIS) structures by electrical characterization, where various interface traps and defects were introduced by thermal annealing treatment. The flat-band voltage shift of capacitance-voltage (C–V) and conductance-voltage (G–V) curves of Si: NC-MIS devices were found to exhibit charge trapping. The current-voltage (I–V) measurement also demonstrate that traps have strong influence on the charge storage behavior, in which the traps and defects at the internal/surface of silicon nanocrystals and the interface states at the LaF3 /Si substrate play different roles, respectively. The flat-band voltage (VFB) shift was about 700 mV, which is agreed well enough to capture charge inside the nanoparticle for nonvolatile memory (NVM) device applications. Thickness-dependent flat-band voltage (VFB) shifts in the MIS structure which can be used as a low-voltage nonvolatile memory.
VL  - 2
IS  - 1
ER  -

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